Datasheet Details
Part number:
STL12N10F7
Manufacturer:
File Size:
568.89 KB
Description:
N-channel Power MOSFET
Features
* Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness ID 12 A 8 76 5 Applications
* Switching applications 1
STL12N10F7-STMicroelectronics.pdf
STL12N10F7, N-channel Power MOSFET
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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