STL12N10F7

N-channel Power MOSFET

STMicroelectronics

STL12N10F7 Features

* Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 12 A 8 76 5 Applications

* Switching applications 1

STL12N10F7 General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL12N10F7 Product summary Order .

STL12N10F7 Datasheet (568.89 KB)

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Datasheet Details

Part number:

STL12N10F7

Manufacturer:

STMicroelectronics ↗

File Size:

568.89 KB

Description:

N-channel power mosfet.
STL12N10F7 Datasheet N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Fea.

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STL12N10F7 N-channel Power MOSFET STMicroelectronics

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STL12N10F7 Features

STL12N10F7 General Description

Datasheet Details

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Description:

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