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STL12N10F7 N-channel Power MOSFET

STL12N10F7 Description

STL12N10F7 Datasheet N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Fea.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, whil.

STL12N10F7 Features

* Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

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