STL38DN6F7AG Datasheet - STMicroelectronics

STL38DN6F7AG Automotive-grade N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. NG14G22D1D2RSS13S21 Product status STL38DN6F7AG Device.

STL38DN6F7AG Features

* Order code VDS RDS(on) max. ID STL38DN6F7AG 60 V 27 mΩ 10 A

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Swit

STL38DN6F7AG Datasheet (703.61 KB)