STL30N10F7 Datasheet - STMicroelectronics

STL30N10F7 N-CHANNEL POWER MOSFET

S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status li.

STL30N10F7 Features

* PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8) 8 76 5 Applica

STL30N10F7-STMicroelectronics.pdf