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STP1N105K3 Datasheet - STMicroelectronics

STP1N105K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl.

STP1N105K3 Features

* Order codes VDS RDS(on) max ID PTOT STF1N105K3 STFW1N105K3 1050 V STP1N105K3 11 Ω 20 W 1.4 A 60 W

* Gate charge minimized

* Extremely large avalanche performance

* 100% avalanche tested

* Very low intrinsic capacitance TAB 3 2 1 TO-220FP 1 3 2 1 TO-3PF 3 2 1 TO-220 Applic

STP1N105K3 Datasheet (319.66 KB)