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STP28N60DM2

N-channel Power MOSFET

STP28N60DM2 Features

* Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely

STP28N60DM2 General Description

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS pha.

STP28N60DM2 Datasheet (869.61 KB)

Preview of STP28N60DM2 PDF

Datasheet Details

Part number:

STP28N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

869.61 KB

Description:

N-channel power mosfet.
STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - pr.

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STP28N60DM2 N-channel Power MOSFET STMicroelectronics

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