* Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND
* Intrinsic fast-recovery body diode
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely h
STP28NM60ND Datasheet (1.59 MB)
STP28NM60ND
1.59 MB
N-channel mosfet.
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 p.
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