STP28NM60ND - N-Channel MOSFET

STMicroelectronics

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Datasheet Details

Part number	STP28NM60ND
Manufacturer	STMicroelectronics
File Size	1.59 MB
Description	N-Channel MOSFET
Datasheet	STP28NM60ND-STMicroelectronics.pdf

STP28NM60ND Product details

Description

These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology.Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.They are ideal for bridge topologies and ZVS phase-shift converters.Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND Table 1. Device summary Marking Packages 2 D PAK 28NM60ND

Features

Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND.
Intrinsic fast-recovery body diode.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.
Extremely high dv/dt and avalanche capabilities.

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Published: Dec 4, 2020 |