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STP32N06LFI, STP32N06L Datasheet - STMicroelectronics

STP32N06LFI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI www.DataSheet4U.com s s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.055 Ω < 0.055 Ω ID 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH.

STP32N06L_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP32N06LFI, STP32N06L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

STP32N06LFI, STP32N06L

Manufacturer:

STMicroelectronics ↗

File Size:

233.91 KB

Description:

N-channel enhancement mode power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP32N06LFI, STP32N06L.
Please refer to the document for exact specifications by model.

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STP32N06LFI STP32N06L N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

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