STP30N06FI - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 www.DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOL.
