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STP30N06FI, STP30N06 Datasheet - ST Microelectronics

STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 www.DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOL.

STP30N06_STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STP30N06FI, STP30N06. Please refer to the document for exact specifications by model.
STP30N06FI Datasheet Preview Page 2 STP30N06FI Datasheet Preview Page 3

Datasheet Details

Part number:

STP30N06FI, STP30N06

Manufacturer:

STMicroelectronics ↗

File Size:

227.27 KB

Description:

N - channel enhancement mode power mos transistor.

Note:

This datasheet PDF includes multiple part numbers: STP30N06FI, STP30N06.
Please refer to the document for exact specifications by model.

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TAGS

STP30N06FI STP30N06 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

STP30N06FI Distributor