STP77N6F6 Datasheet - STMicroelectronics

STP77N6F6, N-CHANNEL POWER MOSFET

STP77N6F6 N-channel 60 V, 6.6 mΩ typ., 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet * production data .
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

Features

* Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate drive power losses

STP77N6F6-STMicroelectronics.pdf