STP77N6F6 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STP77N6F6 Features

* Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses

* Very low switching gate charge Applications

* Switching

STP77N6F6 General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' Table 1. Device sum.

STP77N6F6 Datasheet (398.40 KB)