STTH1R02

Ultrafast recovery diode

STMicroelectronics

STTH1R02 Features

* Very low conduction losses

* Negligible switching losses

* Low forward and reverse recovery times

* High junction temperature Description The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

STTH1R02 General Description

The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-41, DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. AK.

STTH1R02 Datasheet (146.97 KB)