STU75N3LLH6 Datasheet - STMicroelectronics

STU75N3LLH6 N-channel MOSFET

This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Marking Package DPAK TO-220 75N.

STU75N3LLH6 Features

* TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB

* RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive p

STU75N3LLH6_STMicroelectronics.pdf