STU75N3LLH6-S, STU75N3LLH6 Datasheet - STMicroelectronics

STU75N3LLH6-S N-channel MOSFET

This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB IPAK 3 2 1 TAB 3 2 1 Short IPAK TAB 3 1 DPAK TAB 3 2 1 TO-220 Figure 1.

STU75N3LLH6-S Features

* Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS 30 V RDS(on) max < 0.0055 Ω ID 75 A < 0.0059 Ω

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses Application Switching applica

STU75N3LLH6_STMicroelectronics.pdf