STU95N2LH5 Datasheet - STMicroelectronics

STU95N2LH5 N-channel Power MOSFET

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). ' 3 !-V Table 1. Device summary Marking 95N2LH5 95N2LH5 95N2LH5 Packag.

STU95N2LH5 Features

* Type STD95N2LH5 STP95N2LH5 STU95N2LH5

* VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 3

STU95N2LH5_STMicroelectronics.pdf