STW70N60DM6

N-CHANNEL Power MOSFET

STMicroelectronics

STW70N60DM6 Features

* 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche te

STW70N60DM6 General Description

AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effe.

STW70N60DM6 Datasheet (344.33 KB)