STW70N60DM6-4

N-channel Power MOSFET

STMicroelectronics

STW70N60DM6-4 Features

* Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Order code VDS RDS(on) max. ID STW70N60DM6-4 600 V 42 mΩ 62 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalan

STW70N60DM6-4 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STW70N60DM6-4 Datasheet (253.21 KB)