STWA38N65DM6AG Datasheet - STMicroelectronics

STWA38N65DM6AG N-channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STWA38N65DM6AG Features

* Order code STWA38N65DM6AG VDS 650 V RDS(on) max. 82 mΩ ID 42 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely h

STWA38N65DM6AG-STMicroelectronics.pdf