STWA60N043DM9 - N-channel Power MOSFET

STMicroelectronics

STWA60N043DM9 Datasheet Preview — Preview of STWA60N043DM9 PDF

Datasheet Details

Part number	STWA60N043DM9
Manufacturer	STMicroelectronics ↗
File Size	429.63 KB
Description	N-channel Power MOSFET
Datasheet	STWA60N043DM9-STMicroelectronics.pdf

STWA60N043DM9 Product details

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.

Features

Order code VDS RDS(on) max. ID STWA60N043DM9 600 V 43 mΩ 55 A.
Fast-recovery body diode.
Worldwide best RDS(on) per area among silicon-based fast recovery devices.
Low gate charge, input capacitance and resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.

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Published: Jun 26, 2023 |