STWA60N043DM9 Datasheet (STMicroelectronics)

STWA60N043DM9, N-channel Power MOSFET

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.

The silicon-based DM9 technology benefits from a multi-drain manufacturing process which

STWA60N043DM9 Features

* Order code VDS RDS(on) max. ID STWA60N043DM9 600 V 43 mΩ 55 A

* Fast-recovery body diode

* Worldwide best RDS(on) per area among silicon-based fast recovery devices

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremel