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STWA60N043DM9

N-channel Power MOSFET

STWA60N043DM9 Features

* Order code VDS RDS(on) max. ID STWA60N043DM9 600 V 43 mΩ 55 A

* Fast-recovery body diode

* Worldwide best RDS(on) per area among silicon-based fast recovery devices

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremel

STWA60N043DM9 General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which .

STWA60N043DM9 Datasheet (429.63 KB)

Preview of STWA60N043DM9 PDF

Datasheet Details

Part number:

STWA60N043DM9

Manufacturer:

STMicroelectronics ↗

File Size:

429.63 KB

Description:

N-channel power mosfet.
STWA60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET in a TO-247 long leads package TO-247 long leads D(2, TAB) G(1) S(3.

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STWA60N043DM9 N-channel Power MOSFET STMicroelectronics

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