STWA65N045M9 Datasheet - STMicroelectronics

STWA65N045M9 N-channel Power MOSFET

S(3) AM01475v1_noZen This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enha.

STWA65N045M9 Features

* TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. ID STWA65N045M9 650 V 45 mΩ 54 A

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

* Excellent switching performance

* Easy to

STWA65N045M9 Datasheet (555.28 KB)