STWA65N023M9 Datasheet (STMicroelectronics)

STWA65N023M9, N-channel Power MOSFET

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

STWA65N023M9 Features

* Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

* Excellent switching performance

* Easy to drive

* 100% avalanche test