STWA65N023M9 - N-channel Power MOSFET

STMicroelectronics

STWA65N023M9 Datasheet Preview — Preview of STWA65N023M9 PDF

Datasheet Details

Part number	STWA65N023M9
Manufacturer	STMicroelectronics ↗
File Size	261.38 KB
Description	N-channel Power MOSFET
Datasheet	STWA65N023M9-STMicroelectronics.pdf

STWA65N023M9 Product details

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

Features

Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95.
Worldwide best FOM RDS(on).
Qg among silicon-based devices.
Higher VDSS rating.
Higher dv/dt capability.
Excellent switching performance.
Easy to drive.
100% avalanche tested G(1) S(3).

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Published: Jun 26, 2023 |