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STWA65N023M9

N-channel Power MOSFET

STWA65N023M9 Features

* Order code VDS RDS(on) max. ID STWA65N023M9 650 V 23.0 mΩ 95

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

* Excellent switching performance

* Easy to drive

* 100% avalanche test

STWA65N023M9 General Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. .

STWA65N023M9 Datasheet (261.38 KB)

Preview of STWA65N023M9 PDF

Datasheet Details

Part number:

STWA65N023M9

Manufacturer:

STMicroelectronics ↗

File Size:

261.38 KB

Description:

N-channel power mosfet.

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STWA65N023M9 N-channel Power MOSFET STMicroelectronics

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