STY100NM60N Datasheet - STMicroelectronics

STY100NM60N N-CHANNEL Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STY100NM60N Features

* N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet

* production data Type STY100NM60N VDSS @ TJmax 650 V RDS(on) max < 0.029 Ω ID 98 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applica

STY100NM60N-STMicroelectronics.pdf