STY105NM50N

N-CHANNEL POWER MOSFET

STMicroelectronics

STY105NM50N Features

* 3 2 1 Max247 Figure 1. Internal schematic diagram '

* 6 Order code STY105NM50N VDSS @TjMAX 550 V RDS(on) max < 0.022 Ω ID 110 A

* Max247 worldwide best RDS(on)

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistan

STY105NM50N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STY105NM50N Datasheet (879.71 KB)