STY139N65M5

N-channel Power MOSFET

STMicroelectronics

STY139N65M5 Features

* Order code VDS at TJ max. STY139N65M5 710 V

* Extremely low RDS(on)

* Low gate charge and input capacitance

* Excellent switching performance

* 100% avalanche tested Applications

* Switching applications RDS(on) max. 17 mΩ ID 130 A G(1) S(3) Descript

STY139N65M5 General Description

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio.

STY139N65M5 Datasheet (405.80 KB)