STY112N65M5

N-channel Power MOSFET

STMicroelectronics

STY112N65M5 Features

* Order code VDS at TJ max. STY112N65M5 710 V

* Extremely low RDS(on)

* Low gate charge and input capacitance

* Excellent switching performance

* 100% avalanche tested Applications

* Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Descripti

STY112N65M5 General Description

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio.

STY112N65M5 Datasheet (296.48 KB)