VNN1NV04 Datasheet - STMicroelectronics

VNN1NV04 fully autoprotected Power MOSFET

The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the c.

® VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 VNN1NV04 VNS1NV04 RDS(on) 250 mΩ Ilim 1.7 A Vclamp 2 40 V 1 2 3 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT SOT-223 SO-8 3 1 TO-252 (DPAK) PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE ORDER CODES: TO-252 (DPAK) SOT-223 SO-8 VND1NV04 VNN1NV04 VNS1NV04 POWER M.

VNN1NV04 Features

* During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small

VNN1NV04_STMicroelectronics.pdf