VNN1NV04P-E - fully autoprotected Power MOSFET
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir
VNN1NV04P-E Features
* Parameter Symbol Value Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current dra
