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SPC6606 N & P Pair MOSFET

SPC6606 Description

SPC6606 N & P Pair Enhancement Mode MOSFET .
The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench.

SPC6606 Features

* N-Channel 12V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 12V/3.0A,RDS(ON)=35mΩ@VGS=2.5V 12V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
* P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exc

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Datasheet Details

Part number
SPC6606
Manufacturer
SYNC POWER
File Size
517.74 KB
Datasheet
SPC6606-SYNCPOWER.pdf
Description
N & P Pair MOSFET

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Pair MOSFET SYNC POWER
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