* Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C b IDM -Pulsed PD
STS3405
SamHop Microelectronics
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P-channel enhancement mode field effect transistor.
Green Product STS3405 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3.
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