* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
STS3401A
SamHop Microelectronics
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P-channel enhancement mode field effect transistor.
Gre r Pro STS3401A Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3.2A.
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