S T S 3403 S amHop Microelectronics C orp.
AUG .16.2005 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ).
65 @ V G S = -10V 80 @ V G S = -4.5V R ugged and reliable.
S OT-23 P ackage.
D -30V S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain
