STS30N3LLH6

Power MOSFET

STMicroelectronics

STS30N3LLH6 Features

* Type STS30N3LLH6

* VDSS 30 V RDS(on) max 0.0024 Ω ID 30 A RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application

* Switching applications Figu

STS30N3LLH6 General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power dens.

STS30N3LLH6 Datasheet (803.92 KB)

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STS30N3LLH6

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STMicroelectronics ↗

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803.92 KB

Description:

Power mosfet.

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STS30N3LLH6 Power MOSFET STMicroelectronics

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STS30N3LLH6 Features

STS30N3LLH6 General Description

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