STS3P6F6 Datasheet (STMicroelectronics)

STS3P6F6, MOSFET

This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

G (4) S (1,2,3) Order code STS3P6F6 Table 1.

Device summary Marking Package 3K60 SO-8 Packag

STS3P6F6 Features

* 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses ID 3A