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STS3P6F6 MOSFET

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Description

STS3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ F6 Power MOSFET in a SO-8 package Datasheet - production data .
This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure.

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Features

* 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate drive power losses ID 3A

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