Datasheet4U Logo Datasheet4U.com

STS3P6F6

MOSFET

STS3P6F6 Features

* 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses ID 3A

STS3P6F6 General Description

This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G (4) S (1,2,3) Order code STS3P6F6 Table 1. Device summary Marking Package 3K60 SO-8 Packag.

STS3P6F6 Datasheet (543.26 KB)

Preview of STS3P6F6 PDF

Datasheet Details

📁 Related Datasheet

STS30-DIS High-Accuracy Digital Temperature Sensor (SENSIRION)

STS30B6.0 Thyristor Surge Suppresser (SEMIWILL)

STS30N3LLH6 Power MOSFET (STMicroelectronics)

STS31-DIS High-Accuracy Digital Temperature Sensor (SENSIRION)

STS3116E N-Channel MOSFET (SamHop Microelectronics)

STS3400 N-Channel E nhancement Mode F ield E ffect Trans is tor (SamHop Microelectronics)

STS3401 P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

STS3401A P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

STS3402 N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

STS3403 P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

TAGS

STS3P6F6 MOSFET STMicroelectronics

Image Gallery

STS3P6F6 Datasheet Preview Page 2 STS3P6F6 Datasheet Preview Page 3

STS3P6F6 Distributor