* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-
STS3620
SamHop
111.85 KB
Dual n-channel enhancement mode field effect transistor.
Green Product STS3620 Ver 2.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R D.
📁 Related Datasheet
STS3621 Dual P & N-Channel Enhancement Mode Field Effect Transistor (SamHop)
STS3622 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
STS3623 Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop)
STS30-DIS High-Accuracy Digital Temperature Sensor (SENSIRION)
STS30B6.0 Thyristor Surge Suppresser (SEMIWILL)
STS30N3LLH6 Power MOSFET (STMicroelectronics)
STS31-DIS High-Accuracy Digital Temperature Sensor (SENSIRION)
STS3116E N-Channel MOSFET (SamHop Microelectronics)
STS3400 N-Channel E nhancement Mode F ield E ffect Trans is tor (SamHop Microelectronics)
STS3401 P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
