* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
STS3409
SamHop Microelectronics
96.19 KB
P-channel enhancement mode field effect transistor.
Gr Pr
STS3409
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-2.2A
R D.
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