M366S0824CTL Datasheet - Samsung Semiconductor

M366S0824CTL SDRAM DIMM

The Samsung M366S0824CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824CTL consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF deco.

M366S0824CTL Features

* Active standby current in power-down mode ICC3P ICC3PS ICC3N ICC3NS mA 48 16 16 160 80 380 mA 360 1,000 8 mA mA 2 1 mA mA mA Active standby current in non power-down mode (One bank active) O

M366S0824CTL_SamsungSemiconductor.pdf