* t (Burst mode) Refresh current Self refresh current ICC4 620 540 540 mA 1 ICC5 ICC6 620 600 8 600 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Un
M366S0824DT0 Datasheet (122.54 KB)
M366S0824DT0
Samsung Semiconductor
122.54 KB
Sdram dimm.
M366S0824DT0 M366S0824DT0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENE.
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