M366S0824ET0 Datasheet - Samsung Semiconductor

M366S0824ET0 SDRAM DIMM

The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0824ET0 consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decou.

M366S0824ET0 Features

* C6 600 8 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Nov. 2000 M366

M366S0824ET0_SamsungSemiconductor.pdf