M366S0824ET0 - SDRAM DIMM

Samsung Semiconductor

M366S0824ET0 Description

M366S0824ET0 M366S0824ET0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENE.
The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

M366S0824ET0 Features

* C6 600 8 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Nov. 2000 M366

📥 Download Datasheet

M366S0824ET0 Datasheet Preview — Preview of M366S0824ET0 PDF

Datasheet Details

Part number: M366S0824ET0
Manufacturer: Samsung Semiconductor
File Size: 133.48 KB
Datasheet: M366S0824ET0_SamsungSemiconductor.pdf
Description: SDRAM DIMM

📁 Related Datasheet

M366S0924ETS-C7A - (M3xxSxxxxETx-C7A) SDRAM Unbuffered Module (Samsung semiconductor)
M366S0924FTS - SDRAM Unbuffered Module (Samsung)
M366S0924FTS-C7A - SDRAM Unbuffered Module (Samsung)
M366S1623DT0 - PC100 Unbuffered DIMM (Samsung semiconductor)
M366S1623ET0 - Synchronous DRAMs (Samsung semiconductor)
M366S1654CTS - PC133/PC100 Unbuffered DIMM (Samsung semiconductor)
M366S1654ETS - SDRAM Unbuffered Module (Samsung semiconductor)
M366S1723DTS - PC133/PC100 Unbuffered DIMM (Samsung)

📌 All Tags

SDRAM DIMM Samsung Semiconductor

Samsung Semiconductor M366S0824ET0-like datasheet

M366S0824CT0 - SDRAM DIMM
M366S0824CTL - SDRAM DIMM
M366S0824DT0 - SDRAM DIMM
M366S0823CT0 - SDRAM DIMM
M366S0823CTF - SDRAM DIMM
M366S0823CTL - SDRAM DIMM