* C6 600 8 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Nov. 2000 M366
M366S0824ET0 Datasheet (133.48 KB)
M366S0824ET0
Samsung Semiconductor
133.48 KB
Sdram dimm.
M366S0824ET0 M366S0824ET0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENE.
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