Datasheet Specifications
- Part number
- M366S0824ET0
- Manufacturer
- Samsung Semiconductor
- File Size
- 133.48 KB
- Datasheet
- M366S0824ET0_SamsungSemiconductor.pdf
- Description
- SDRAM DIMM
Description
M366S0824ET0 M366S0824ET0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENE.Features
* C6 600 8 mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Rev. 0.0 Nov. 2000 M366M366S0824ET0 Distributors
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