K4S281632E-TC60 Datasheet, Specification, Samsung semiconductor

✔ K4S281632E-TC60 Features

JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burs

✔ K4S281632E-TC60 Application

Ordering Information Part No. K4S280432E-TC(L)75 K4S280832E-TC(L)75 K4S281632E-TC(L)60/75 Orgainization 32

PDF File Details

Samsung semiconductor manufacturer logo

Part number:

K4S281632E-TC60

Manufacturer:

Samsung semiconductor

File Size:

144.28 KB

Download:

📄 Datasheet

Description:

128mb e-die sdram specification. The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words

📥 Download PDF (144.28 KB)

📁 Related Datasheet

K4S281632E-TC75 - 128Mb E-die SDRAM Specification (Samsung semiconductor)

K4S281632E-TL60 - 128Mb E-die SDRAM Specification (Samsung semiconductor)

K4S281632E-TL75 - 128Mb E-die SDRAM Specification (Samsung semiconductor)

K4S281632B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632B-N - 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP (Samsung semiconductor)

K4S281632B-TC10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632B-TC1H - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S281632B-TC1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

TAGS

K4S281632E-TC60 128Mb E-die SDRAM Specification Samsung semiconductor