Description
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Features
- JEDEC standard 3.3V power supply.
 
- LVTTL compatible with multiplexed address.
 
- Four banks operation.
 
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave).
 
- All inputs are sampled at the positive going edge of the system clock.
 
- Burst read single-bit write operation.
 
- DQM (x4,x8) & L(U)DQM (x16) for maskin.
 
- Auto & self refresh.
 
- 64ms refresh per.