K4S281632E-TL75, K4S - 128Mb E-die SDRAM Specification

Samsung semiconductor

The K4S281632E-TL75 by Samsung semiconductor is a 128Mb E-die SDRAM Specification. Below is the official datasheet preview.

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K4S281632E-TL75 128Mb E-die SDRAM Specification by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S281632E-TL75** 128Mb E-die SDRAM Specification datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S281632E-TL75, K4S
Manufacturer	Samsung semiconductor
File Size	144.28 KB
Description	128Mb E-die SDRAM Specification
Datasheet	K4S-281632.pdf
Note	This datasheet PDF includes multiple part numbers: K4S281632E-TL75, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S281632E-TL75 datasheet.

K4S281632E-TL75 Product details

Description

The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for maskin.
Auto & self refresh.
64ms refresh per.

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Other Datasheets by Samsung semiconductor

K4S281632E-TL60 - 128Mb E-die SDRAM Specification
K4S281632E-TC60 - 128Mb E-die SDRAM Specification
K4S281632E-TC75 - 128Mb E-die SDRAM Specification
K4S281632B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B-N - 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
K4S281632B-TC10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Published: Apr 7, 2005 |