K4S28323LF
Samsung semiconductor
141.48kb
1m x 32bit x 4 banks mobile sdram in 90fbga. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated wit
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K4S28323LF-ER1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S28323LF-F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S28323LF-FR60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S28323LF-HER75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S28323LF-NR1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 2.5V power supply. • LVCMOS patible with multiplexed address. •.
K4S283233F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S283233F-F1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S283233F-F1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.
K4S283233F-F60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
(Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.