K4S28323LF-F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

Description

K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4S28323LF-F
Manufacturer: Samsung semiconductor
File Size: 141.48 KB
Datasheet: K4S28323LF-F_Samsungsemiconductor.pdf
Description: 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4S28323LF-F(H)E/N/S/C/L/R60 K4S28323LF-F(H)E/N/S/C/L/R75 K4S28323LF-F(H)E/N/S/C/L/R1H K4S28323LF-F(H)E/N/S/C/L/R1L Max Freq. 166MHz(CL=3) 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - F(H)E/N/S : Normal/Low/Super

K4S28323LF-F Distributors

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K4S28323LF-F 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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