K4S28323LF-NR1L Datasheet, 90fbga, Samsung semiconductor

K4S28323LF-NR1L Features

• 90fbga
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

PDF File Details

Part number:

K4S28323LF-NR1L

Manufacturer:

Samsung semiconductor

File Size:

141.48kb

Download:

📄 Datasheet

Description:

1m x 32bit x 4 banks mobile sdram in 90fbga. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated wit

K4S28323LF-NR1L Application

• Applications ORDERING INFORMATION Part No. K4S28323LF-F(H)E/N/S/C/L/R60 K4S28323LF-F(H)E/N/S/C/L/R75 K4S28323LF-F(H)E/N/S/C/L/R1H K4S28323LF-F(H)E

TAGS

K4S28323LF-NR1L

Samsung semiconductor

📁 Related Datasheet

K4S28323LF-ER1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S28323LF-F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S28323LF-FR60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S28323LF-HER75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S28323LF - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S28323LF - F(H)E/N/S/C/L/R 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multiplexed address. •.

K4S283233F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-F1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-F1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.

K4S283233F-F60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
K4S283233F - F(H)E/N/G/C/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed add.