K4S28323LF-HER75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Name: K4S28323LF-HER75
SKU: K4S28323LF-HER75-263832

Samsung semiconductor

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Datasheet Details

Part number	K4S28323LF-HER75
Manufacturer	Samsung semiconductor
File Size	141.48 KB
Description	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S28323LF-HER75_Samsungsemiconductor.pdf

K4S28323LF-HER75 Product details

Description

The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Apr 7, 2005 |