K4S28323LF-HER75 Datasheet, 90fbga, Samsung semiconductor

K4S28323LF-HER75 Features

• 90fbga
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

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Part number:

K4S28323LF-HER75

Manufacturer:

Samsung semiconductor

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141.48kb

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📄 Datasheet

Description:

1m x 32bit x 4 banks mobile sdram in 90fbga. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated wit

K4S28323LF-HER75 Application

• Applications ORDERING INFORMATION Part No. K4S28323LF-F(H)E/N/S/C/L/R60 K4S28323LF-F(H)E/N/S/C/L/R75 K4S28323LF-F(H)E/N/S/C/L/R1H K4S28323LF-F(H)E

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K4S28323LF-HER75

Samsung semiconductor

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