K4S510832B-TC75

512Mb B-die SDRAM Specification

Samsung semiconductor

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Datasheet Details

Part number:

K4S510832B-TC75

Manufacturer:

Samsung semiconductor

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149.53 KB

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Description:

512mb b-die sdram specification.
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February .
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM .

✔ K4S510832B-TC75 Features

JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burs

✔ K4S510832B-TC75 Application

Ordering Information Part No. K4S510432B-TC(L)75 K4S510832B-TC(L)75 K4S511632B-TC(L)75 Orgainization 128Mb

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K4S510832B-TC75 512Mb B-die SDRAM Specification Samsung semiconductor