* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
K4S510432M Datasheet (104.04 KB)
K4S510432M
Samsung semiconductor
104.04 KB
512mbit sdram 32m x 4bit x 4 banks synchronous dram lvttl.
K4S510432M Preliminary CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec. 2001 Samsung El.
📁 Related Datasheet
K4S510432B-TC 512Mb B-die SDRAM Specification (Samsung semiconductor)
K4S510432B-TC75 512Mb B-die SDRAM Specification (Samsung semiconductor)
K4S510432B-TCL75 512Mb B-die SDRAM Specification (Samsung semiconductor)
K4S510432D 512Mb D-die SDRAM (Samsung)
K4S510732B Stacked 512Mbit SDRAM (Samsung semiconductor)
K4S510832B-TC75 512Mb B-die SDRAM Specification (Samsung semiconductor)
K4S510832B-TCL75 512Mb B-die SDRAM Specification (Samsung semiconductor)
K4S510832D 512Mb D-die SDRAM (Samsung)
K4S510832M 16M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S511533F-YC 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
TAGS
Image Gallery
