K4S510832B-TCL75 Datasheet, specification equivalent, Samsung semiconductor

PDF File Details

Part number: K4S510832B-TCL75

Manufacturer: Samsung semiconductor

File Size: 149.53KB

Download: 📄 Datasheet

Description: 512Mb B-die SDRAM Specification

Datasheet Preview: K4S510832B-TCL75 📥 Download PDF (149.53KB)

K4S510832B-TCL75 Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

K4S510832B-TCL75 Application

Ordering Information Part No. K4S510432B-TC(L)75 K4S510832B-TC(L)75 K4S511632B-TC(L)75 Orgainization 128Mb x 4 (CL=3) .

K4S510832B-TCL75 Description

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performa.

Image gallery

Page 2 of K4S510832B-TCL75 Page 3 of K4S510832B-TCL75

TAGS

K4S510832B-TCL75
512Mb
B-die
SDRAM
Specification
Samsung semiconductor

📁 Related Datasheet

K4S510832B-TC75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S510832D - 512Mb D-die SDRAM (Samsung)
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS compliant) INFORMATION IN THIS DO.

K4S510832M - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S510832M Preliminary CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www..com Revision 0.2 Dec. 2001 Samsung El.

K4S510432B-TC - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S510432B-TC75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S510432B-TCL75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS compliant) INFORMATION IN THIS DO.

K4S510432M - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S510432M Preliminary CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL www..com Revision 0.2 Dec. 2001 Samsung El.

K4S510732B - Stacked 512Mbit SDRAM (Samsung semiconductor)
Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www..com Revision 0.0 Feb. 2001 * S.

K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts