Datasheet4U Logo Datasheet4U.com
6 views

K4S510832M Datasheet - Samsung semiconductor

16M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S510832M Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S510832M General Description

The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S510832M Datasheet (103.92 KB)

Preview of K4S510832M PDF

Datasheet Details

Part number:

K4S510832M

Manufacturer:

Samsung semiconductor

File Size:

103.92 KB

Description:

16m x 8bit x 4 banks synchronous dram lvttl.
K4S510832M Preliminary CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec. 2001 Samsung El.

📁 Related Datasheet

K4S510832B-TC75 512Mb B-die SDRAM Specification (Samsung semiconductor)

K4S510832B-TCL75 512Mb B-die SDRAM Specification (Samsung semiconductor)

K4S510832D 512Mb D-die SDRAM (Samsung)

K4S510432B-TC 512Mb B-die SDRAM Specification (Samsung semiconductor)

K4S510432B-TC75 512Mb B-die SDRAM Specification (Samsung semiconductor)

K4S510432B-TCL75 512Mb B-die SDRAM Specification (Samsung semiconductor)

K4S510432D 512Mb D-die SDRAM (Samsung)

K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S510732B Stacked 512Mbit SDRAM (Samsung semiconductor)

K4S511533F-YC 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)

TAGS

K4S510832M 16M 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

Image Gallery

K4S510832M Datasheet Preview Page 2 K4S510832M Datasheet Preview Page 3

K4S510832M Distributor