Part number: K4S510832M
Manufacturer: Samsung semiconductor
File Size: 103.92KB
Download: 📄 Datasheet
Description: 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.
ORDERING INFORMATION
Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II)
FUNCTION.
The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
Image gallery
TAGS
📁 Related Datasheet
K4S510832B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S510832B-TCL75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S510832D - 512Mb D-die SDRAM
(Samsung)
K4S510432D K4S510832D K4S511632D
Synchronous DRAM
512Mb D-die SDRAM Specification
54 TSOP-II with Lead-Free
(RoHS compliant)
INFORMATION IN THIS DO.
K4S510432B-TC - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S510432B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S510432B-TCL75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S510432D - 512Mb D-die SDRAM
(Samsung)
K4S510432D K4S510832D K4S511632D
Synchronous DRAM
512Mb D-die SDRAM Specification
54 TSOP-II with Lead-Free
(RoHS compliant)
INFORMATION IN THIS DO.
K4S510432M - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
(Samsung semiconductor)
K4S510432M
Preliminary CMOS SDRAM
512Mbit SDRAM
32M x 4bit x 4 Banks Synchronous DRAM LVTTL
www..com
Revision 0.2 Dec. 2001
Samsung El.
K4S510732B - Stacked 512Mbit SDRAM
(Samsung semiconductor)
Preliminary
K4S510732B CMOS SDRAM
Stacked 512Mbit SDRAM
16M x 8bit x 4 Banks Synchronous DRAM LVTTL
www..com
Revision 0.0 Feb. 2001
* S.
K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S511533F - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. .