K4S510832M Datasheet - Samsung semiconductor

K4S510832M, 16M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S510832M Preliminary CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec.2001 Samsung El.
The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high.

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Datasheet Details

Part number:

K4S510832M

Manufacturer:

Samsung semiconductor

File Size:

103.92 KB

Description:

16M x 8bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 16M x 8 16M x 8 16M x 8 16M x 8 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi

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K4S510832M 16M 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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