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K4S510732B Datasheet - Samsung semiconductor

Stacked 512Mbit SDRAM

K4S510732B Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S510732B General Description

The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

K4S510732B Datasheet (94.25 KB)

Preview of K4S510732B PDF

Datasheet Details

Part number:

K4S510732B

Manufacturer:

Samsung semiconductor

File Size:

94.25 KB

Description:

Stacked 512mbit sdram.
Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.0 Feb. 2001

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K4S510732B Stacked 512Mbit SDRAM Samsung semiconductor

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