K4S51323PF-MEF, K4S51323PF-MF Datasheet - Samsung semiconductor

K4S51323PF-MEF 4M x 32Bit x 4 Banks Mobile-SDRAM

The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S51323PF-MEF Features

* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with address key programs.

* All inputs

K4S51323PF-MF_Samsungsemiconductor.pdf