The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4S51323PF-MEF Features
* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with address key programs.
* All inputs
K4S51323PF-MF_Samsungsemiconductor.pdf
Datasheet Details
K4S51323PF-MEF, K4S51323PF-MF
Samsung semiconductor
171.32 KB
4m x 32bit x 4 banks mobile-sdram.
This datasheet PDF includes multiple part numbers: K4S51323PF-MEF, K4S51323PF-MF.
Please refer to the document for exact specifications by model.
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