K4S51323PF-MF
Samsung semiconductor
171.32kb
4m x 32bit x 4 banks mobile-sdram. The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated wit
TAGS
📁 Related Datasheet
K4S51323PF-MEF - 4M x 32Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51323PF-M(E)F
4M x 32Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S513233F-MC - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S513233F-MEC - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S513233F-MEF - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S513233F-MEL - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S513233F-MF - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S513233F-ML - Mobile SDRAM
(Samsung semiconductor)
K4S513233F - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .
K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S51323LF - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .
K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S51323LF - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .
K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM
(Samsung semiconductor)
K4S51323LF - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .